发明名称 REPRODUCTION OF ACTIVE MATRIX ARRAY
摘要 <p>PURPOSE:To inspect signals to be outputted to source gate lines by impressing the signals impressed to gate signal lines to drain terminals of FETs and to make defect inspection of elements at a high speed by forming drain short- circuit elements which short-circuit the gate signal lines and drain terminals. CONSTITUTION:The drain and gate signal line short-circuit parts (drain short- circuit elements) 10 are formed simultaneously with the formation of the drain terminals 4 or the formation of picture element electrodes 5 at the time of forming the ordinary gate signal lines 1 of an active matrix array. A voltage measuring means 11 is connected successively from a pickup resistance R1 to resistance R4 and the negative voltages are generated from voltage impressing means E1-E4 connected with said means 11 at the time of inspecting the active matrix array. The voltages across the resistors R1-R4 are measured by the means 11. The negative voltages can be measured by the flow of current to the route of a short-circuit defect 6 at the time. The short-circuit defect between the source and drain of the FET to which the means 11 is connected is thus detected.</p>
申请公布号 JPS6448035(A) 申请公布日期 1989.02.22
申请号 JP19870204640 申请日期 1987.08.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKAHARA HIROSHI
分类号 H01L29/78;G02F1/13;G02F1/133;G02F1/136;G02F1/1368;G09F9/35;H01L21/66;H01L21/82;H01L27/12;H01L29/786 主分类号 H01L29/78
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