| 摘要 |
PURPOSE:To prevent a fusion-bonding metal and a wiring layer from reacting by providing a barrier layer made of diffusion preventing metal or insulator of a fusion-bonding metal layer also on the side face of the metal. CONSTITUTION:An AuSn fusion-bonding metal layer 6 is formed as a bump through an Ni layer or a Pt/Ti layer as a barrier layer 5 made of the diffusion preventing metal of the fusion-bonding metal at an electrode forming position on an Au/AuGe ohmic contact electrode 3 formed on an N-type InP substrate 1. Then, an Ni layer 8 is deposited on a whole substrate, covered with an AZ resist, patterned to allow an AZ resist pattern 10 to remain on the periphery of the electrode. Thereafter, the pattern 10 is etched back by reactive ion etching using O2 to expose the layer 8 on the top of the electrode. Subsequently, the exposed layer 8 is removed by ion beam etching using Ar, and the pattern 10 is isolated. Thus, it can prevent the fusion-bonding metal from diffusing in or reacting with the ohmic contact electrode or the wiring electrode, thereby reducing preferable bonding and element characteristic deteriorations.
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