Method for measuring lattice defects in semiconductor,申请号US19870136691-传众专利搜索

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发明名称	Method for measuring lattice defects in semiconductor
摘要
申请公布号	US4803884(A)	申请公布日期	1989.02.14
申请号	US19870136691	申请日期	1987.12.22
申请人	FUJITSU LIMITED	发明人	KANETA, HIROSHI;OGAWA, TSUTOMU;MORI, HARUHISA;WADA, KUNIHIKO
分类号	G01N29/00;G01N29/07;(IPC1-7):G01N29/04	主分类号	G01N29/00
代理机构		代理人
主权项
地址

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