SEMICONDUCTOR DEVICE HAVING CONDUCTOR LINES CONNECTING THE ELEMENTS

摘要

In a semiconductor device of an integrated circuit having a groove isolation structure (10), an electrostatic separating structure (21) similar to the groove isolation structure is formed under the conductor lines (5) connecting the elements and in a portion of the semiconductor body (7) other than that necessary for the elements. The electrostatic separating structure (21) comprises a V-shaped or U-shaped insulating layer (22), a filled-in nonconductive material (e.g. polycrystalline silicon) (23), and a relatively thick insulating layer (24), so that the stray capacity of the conductor lines (5) can be reduced.