| 摘要 |
A process for producing encapsulated semiconductor devices, which comprises using planar semiconductor-device-forming technique known per se to form a plurality of spaced semiconductor devices on a wafer, etching between the devices so formed, and passivating the etched array of devices, wherein:- (a) the wafer is mounted on an inert solid sheet substrate; (b) after application of the per se - known semiconductor-device-forming technique to the wafer, a selective etching process is applied to divide the mounted wafer into a plurality of separate portions of the wafer material carrying semiconductor devices, each portion mounted on the substrate; (c) a passivating process is applied to the devices to cover them with passivating material and this is followed afterwards by etching to reveal locations for ohmic connections thereon; and (d) the devices are then separated by cutting or breaking the substrate sheet into portions carrying semiconductor devices in which no part of the semiconductor-wafer materials (except ohmic contact locations) is left uncovered by passivating material. |
