| 摘要 |
PURPOSE:To make it possible to form a super fine pattern in an arbitrary shape, which is more excellent than the resolution in lithography, by depositing a film having different material quality on the side wall of a pattern, which is resolved by lithography, thereafter removing the initial pattern, and using the deposited film as a new pattern. CONSTITUTION:A polycrystalline silicon film is deposited on a quartz glass substrate 10. Minute machining is performed by ordinary photolithography and dry etching. Thus a protruding pattern 12 is formed. Then, an SiO2 film 15 is formed on said protruding pattern 12. The SiO2 film 13 is etched back. The SiO2 on the substrate 10 and the polycrystalline silicon film pattern 12 is etched away. Then, the protruding pattern 12 of the polycrystalline silicon film is etched away. A protruding pattern 14 of an SiO2 film is formed. An Si film 15 is deposited around said pattern. Then, the a-Si film 15 is etched. The a-Si film on the substrate 10 and the SiO2 protruding pattern 14 is etched away. An SiO2 film 16 is formed on the patters by the similar way described above. The SiO2 film 16 is etched away by the similar way as described above. The protruding pattern 14 for the a-Si film 15 is removed by light excited dry etching by the similar way described above. |
