| 摘要 |
PURPOSE:To simultaneously perform high reliability an high speed of a semiconductor device by implanting silicon ions and activating the part of a region to become a channel region, source and drain regions of a semiconductor layer on an insulating substrate, then ion implanting the part of the region with a gate electrode formed through a gate insulating film as a mask. CONSTITUTION:A p type single crystalline silicon layer 12 is formed on the overall surface of a sapphire substrate 11, and the layer 12 is then selectively oxidized to isolate the element via a silicon oxidized film 13. Then, silicon ions are implanted to the interior of the layer 12 through a hole 15 of a photoresist film 14. Then, the entirety is heat treated at 1,000 deg.C for approx. 20min, thereby forming an activated ion implanted region 16. Then, a gate electrode 19 made of a gate oxidized film 17 and a polycrystalline silicon film 18 is formed on the upper surface of the part of the region 16. Then, with the gate electrode 19 as a mask arsenic ions are doped. Then, n<+> type regions 20A, 20B having the diffusion depth of the arsenic as the impurity becomes shallow are formed at both sides of the gate electrode 19. |
