| 摘要 |
PURPOSE:To limit a current flowing through a route of continuity generated due to breakage of an insulating film and to prevent a voltage of the whole memory cell from dropping, by connecting a resistance in series to a terminal to which a high voltage is applied in order to generate a tunnel current. CONSTITUTION:A floating gate (FG) 3 is connected with an erasure terminal (ERS) 2, with a first floating gate insulating film 6 and a resistance (R2) 21 in between, and also it is connected with a control gate (CG) 1, with a second floating gate insulating film 7 and a resistance (R1) 20 in between, and further it is used as a gate of a readout transistor 10, with a third floating gate insulating film 8 in between. Even if the insulating film surrounding the floating gate 3 is broken upon the erasing of electrons from the floating gate 3 and upon the injecting of the electrons into the floating gate 3, accordingly a current is limited by the resistances 20 and 21 connected in series to a high voltage terminal, and so the high voltage can be prevented from dropping. |
