TRANSPARENT ELECTRICITY CONDUCTIVE FILM

摘要

PURPOSE:To reduce surface resistance and at the same time improve transparency by making fine powder of n-type metallic oxide semiconductor dispersed in a bonding material to have a small resistance through a contact process with a metallic halogen compound of an unsaturated oxidation number. CONSTITUTION:Fine powder of n-type metallic oxide semiconductor made of tin dioxide or indium oxide and having a powder diameter of wave length of visible light or smaller is dispersed in an adhesive agent made of synthetic resin containing polyelectrolyte to form a transparent electricity conductive film. The resistance of the fine powder of n-type metallic oxide semiconductor to be dispersed is made smaller through a contact process with a metallic halogen compound of an unsaturated oxidation number. The halogenated metal is chosen from a group consisting of halogenous tin and trihalogenated antimony. As a result, it is possible to reduce surface resistance and at the same time improve transparency.