| 摘要 |
PURPOSE:To increase dielectric breakdown strength and improve reliability by using an silicon oxide film obtained by oxidizing first polycrystalline silicon deposited onto a gate electrode material as an insulating film between first polycrystalline silicon and second polycrystal line silicon. CONSTITUTION:A gate electrode material 102 is deposited after a GATE oxidation process, first polycrystalline silicon 103 is deposited onto the gate electrode material 102, and the first polycrystalline silicon 103 and the gate electrode material 102 are etched, employing a resist pattern as a mask. The first polycrystalline silicon 103 and the gate electrode material 102 are oxidized partially, first silicon oxide 104 is deposited, and the first silicon oxide 104 is etched left only on the sidewall sections of the first polycrystalline silicon 103 and the gate electrode material 102. Second silicon oxide 105 is deposited, the second silicon oxide 105 is etched, using a resist pattern 106 as a mask, and second polycrystalline silicon 107 is deposited. Accordingly, insulating properties between the gate electrode material 102 and the second polycrystalline silicon 107 can be stabilized.
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