| 摘要 |
<p>In a process for etching a substrate using a gaseous plasma generated either by hyperfrequency waves or by radiofrequency and hyperfrequency waves, the gaseous medium used for the production of the plasma comprises at least one fluorinated carbon-free gas such as SF6, at least one rare gas such as Ar, at least one oxidizing carbon-free gas such as oxygen, and possibly another gas such as nitrogen. The invention is applicable in particular in the field of microelectronics.</p> |
