发明名称 |
PRODUCTION OF BORON CARBONITRIDE FILM |
摘要 |
PURPOSE:To stably form a thin boron carbonitride film on the surface of a substrate by vapor-depositing C and B on the surface of the substrate in a vacuum vessel and implanting N ions into the substrate. CONSTITUTION:An Si substrate 7 is rotatably fitted to the inside of a vacuum vessel 1 and the vessel 1 is evacuated to about 10<-5> Pa by a vacuum pump P. N<+> ions from a nitrogen ion emitter 3 are implanted into the substrate 7. At the same time, C and B atoms. are evaporated from C and B atom. evaporators 4, 5 with electron guns and deposited on the surface of the substrate 7. A thin boron carbonitride film is formed on the substrate 7 by the implanted N<+> ions.
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申请公布号 |
JPS63307259(A) |
申请公布日期 |
1988.12.14 |
申请号 |
JP19870140372 |
申请日期 |
1987.06.04 |
申请人 |
FUJITSU LTD |
发明人 |
KAWARADA MOTONOBU;SASAKI KENICHI;ETSUNO NAGAAKI |
分类号 |
C23C14/06;C23C14/24;C23C14/48 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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地址 |
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