发明名称 FORMATION OF RESIST PATTERN OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To check reflection of ultraviolet rays due to the unevenness of the substrate surface and its stepped part and to enable a correct resist pattern to be formed, by providing a polarization film between the substrate surface and a photoresist layer. CONSTITUTION:An electrode 11 consisting of aluminium or the like is formed on the surface of a semiconductor substrate 10 and the surface of the substrate 10 including this electrode 11 is covered with a polarization film 12 formed in the sheet shape. Polarized ultraviolet rays 17 transmit the useless part 13a of a photoresist layer 13 to be incident as far an its inside. And the incidence to the surface of the substrate 10 is interrupted by the action of the polarization film 12 having the different polarization direction from the polarization direction of the polarized ultraviolet rays without reaching the surface of the substrate 10. Accordingly, the polarized ultraviolet rays are not irregularly reflected by the unevenness of the surface of the substrate 10 and the stepped part so as not to generate their reflection rays.
申请公布号 JPS63300516(A) 申请公布日期 1988.12.07
申请号 JP19870135692 申请日期 1987.05.30
申请人 ROHM CO LTD 发明人 ISHII HIROYOSHI
分类号 G03F7/26;G03C1/00;G03C5/00;G03F7/00;G03F7/09;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F7/26
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