| 摘要 |
PURPOSE:To make it possible to uniformly make a grain boundary part into an insulator by placing plural primary sintered bodies on a table soaked with metallic oxide to be baked. CONSTITUTION:In the manufacture of high dielectric constant porcelain where a metal oxide is dispersed to a grain boundary part so as to make the grain boundary part into a insulator by attaching a metal oxide to a sintered body constituted of crystal grains of semiconductor porcelain, a primary sintered body 1 is placed on a table 2 which is constituted of low hole material having heat resistance and soaked previously with metal oxide so as to bake, thus the metal oxide is dispersed from the contact face between the table 2 and the sintered body 1. Accordingly, the metal oxide is dispersed from the contact face with the table 2 to the grain boundary part of the sintered body 1. Hereby the distribution of the component of a layer that becomes a high dielectric constant porcelain becomes uniform and the quality becomes table.
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