发明名称 STORAGE TREATMENT DEVICE FOR GAS
摘要 PURPOSE:To freely adjust the compsn. ratios of an accumulated layer of an amorphous metal by using respectively exclusive DC high-voltage power supplies provided on the outside to vary and adjust the ratio of the voltages to be impressed on a transition metal element and rare earth metal material. CONSTITUTION:The negative voltage is gradually and successively impressed on the rare earth metal material 15 as well by the DC high-voltage power supply 26d for sputtering the rare earth metal material. The negative voltage of an outer cathode container 1 is increased to a high voltage below 1kV simultaneously therewith. The accumulated layer 16 of the amorphous alloy by both of the transition metal material 14 and the rare earth metal material 15 is thereby formed and ions 12 of radioactive waste gases are continuously injected therein. The storage treatment of said gases is thus executed. A system control device 31 applies commands to a power supply controller 27 while monitoring the amt. of the gases to be injected and treated with a flow meter 30 and adjusts the ratio of the voltages to be impressed on the transition and rare earth metal materials 14, 15, thereby automatically controlling the operation so that the treatment device can be operated at the max. injection capacity.
申请公布号 JPS63290997(A) 申请公布日期 1988.11.28
申请号 JP19870125585 申请日期 1987.05.22
申请人 TOSHIBA CORP 发明人 KOBAYASHI YOSHIHIRO;TAKANO YOSOKO
分类号 G21F9/02;G21F9/00 主分类号 G21F9/02
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