发明名称 PRODUCTION OF SILICON NITRIDE SINTERED MATERIAL
摘要 PURPOSE:To produce a pure silicon nitride sintered material having high strength in a simple apparatus, by charging a material to be sintered consisting of silicon nitride into a crucible whose surface is constituted by dense silicon carbide and burning the material under ordinary pressure while inhibiting the enter of the outer air. CONSTITUTION:A crucible wherein at least part of the surface is constituted by dense silicon carbide whose open porosity is preferably <=10vol.% is prepared. A material to be sintered consisting of silicon nitride is inserted into the crucible and burned under ordinary pressure while inhibiting the entry of the open air to provided the aimed silicon carbide sintered material. According to the above- mentioned method, the silicon nitride having high strength can be produced, since the silicon nitride unreacts with nitrogen and silicon produced by thermal decomposition of silicon nitride when burned and the partial pressure of nitrogen gas produced can be maintained to high state, because the crucible whose surface is constituted by dense silicon carbide is used.
申请公布号 JPS63285169(A) 申请公布日期 1988.11.22
申请号 JP19870120941 申请日期 1987.05.18
申请人 IBIDEN CO LTD 发明人 TSUKADA KIYOTAKA
分类号 C04B35/584;C04B35/58 主分类号 C04B35/584
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