发明名称 SECONDARY ION MASS ANALYSIS
摘要 PURPOSE:To increase a sensitivity by irradiating compound ions containing an oxygen ion or oxygen from an ion source different from a primary ion source and conducting an analysis with an oxygen density of 30atom.% or above in an analyzing region from the surface of a specimen to an about 2,000Angstrom depth. CONSTITUTION:An ion implantation optical system 2 for sputtering a specimen in an analysis is provided together with a primary ion optical system 1 composed of, for example, an ion source 4 and the like and an analytic result is displayed on a CRT 16 or the like via a secondary ion optical system 3. The optical system 2 is constructed so that accelerating energy can be set to 1-1,000kV. Accelerated ions are irradiated from an implanting ion source 10 on the surface of a specimen 9 to increase an oxygen density on a measuring surface and increase the yield of secondary ions of impurities in the specimen. Accordingly, the highly sensitive analysis can be conducted.
申请公布号 JPS63282641(A) 申请公布日期 1988.11.18
申请号 JP19870115938 申请日期 1987.05.14
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 TANAKA TORU;HONMA YOSHIKAZU;ISHII YOSHIICHI
分类号 G01N23/225;H01J37/252;H01J49/14 主分类号 G01N23/225
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