| 摘要 |
PURPOSE:To improve the transmission stability of a Bloch line couple by providing an aluminum film pattern on the stabilized area of a stripe domain constituting a magnetic memory element using the vertical Bloch line couple as a memory holder. CONSTITUTION:The pattern 3 made of an aluminum film is disposed on the area where the domain needs to be held on a stripe domain holding layer 1, and an auxiliary pattern 5 made of aluminum film is so disposed as sandwiching the separated areas along said pattern 3. Thereafter, a chip is heat-treated at 600-800 deg.C in ambient atmosphere of air or nitrogen for 30-60min, and the saturation magnetization of a domain holding layer 12 under the pattern is selectively made smaller. Then, the patterns 3 and 5 are separated, and on their both end sides, a domain generator and a local in-plane magnetism generation means 8 and 9 are disposed. As a result, the steep film thickness difference of the holding layer surface around the stabilized domain can be eliminated, and the ununiformity of the potential wells of a magnetic wall part can be eliminated.
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