| 摘要 |
PURPOSE:To make the etching process of a wiring unnecessary, and reduce the step-difference of surface, by introducing impurity into a superconducting thin film except a part turning to a wiring, said thin film being deposited on the whole surface. CONSTITUTION:The title device has a superconducting thin film 41 in which iron atom Fe as impurity is introduced. This element is cooled to a critical temperature (absolute temperature 77 deg.K) or less at which the superconducting thin film 4 exhibits superconductivity. The electric resistance of the region 4 in which iron atom is not introduced becomes zero, but iron in the region 41 does not turn in a superconductive state at a temperature of 77 deg.K because of impurity. As (B2Y)3 Cu3O8 which is used as superconducting material is essentially a ceramic, it operates as an insulator having no electric conductivity in a non-superconductive state. Therefor, at a temperature of 77 deg.K, only the region 4 except the region 41 in which ion atom is introduced, turns in the wiring of a MOS transistor having a conductivity of zero resistance. Thereby, the device can be formed with a wiring free from etching, the step-difference of surface can be reduced, and the patterning and the like of a passivation film on the wiring can be facilitated.
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