| 摘要 |
PURPOSE:To protect a substrate against damage so as to obtain a device improved in yield and reliability by a method wherein a reverse conductive type diffusion layer of high concentration is formed self-matchedly on a gate electrode including a high melting metallic layer after a high melting metallic layer is formed at least on a side wall of the gate electrode. CONSTITUTION:A reactive ion etching is performed selectively onto a polycrystalline silicon film 14 to form a gate 14A, where an etching condition is so set as to leave a gate oxide film preserved on a substrate surface except the gate electrode. N-type impurity such as phosphorus and the like is ion- implanted self-matchedly into the formed gate electrode 14A for the formation of n<->layers 16 and 17. Next, a high melting metal film 18 such as tungsten or the like is selectively grown only on a polycrystalline silicon surface including the side face of the gate electrode 14A 1000Angstrom -2000Angstrom in thickness and n-type impurity such as arsenic or the like is ion-implanted self-matchedly into a gate region including the grown high melting metallic film 18 so as to form n<+> layers 19 and 20. By these processes, the plasma damage against a substrate is completely prevented, and a device is improved in reliability and yield.
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