MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To control the crystal growth and obtain a good quality single crystal silicon island which is free from defects by providing a polycrystalline semiconductor or a metallic silicide region which is embedded in a substrate after separating electrically it and then by causing a polycrystalline silicon island to perform a crystal growth with a laser beam. CONSTITUTION:SiO2 3 is formed at an exposed part of a silicon substrate 1 having a groove 100 and polycrystalline silicon or metallic silicide 4 is embedded in a groove part. After forming a polycrystalline silicon layer 5, for example, a polycrystalline silicon island 5 surrounded by SiO2 2 and 2A is formed by the aid of a normal LOCOS (Localized Oxidation of Silicon) technique or mesa etching and a retaining wall SiO2 2A formation. In such a case, it is formed so that a part of the polycrystalline silicon island 5 comes into contact with embedded polycrystalline silicon or tungsten silicide 4. And for example, argon laser L having continuous oscillations irradiates by a power of 1-10W while scanning in the direction of X with an arrow at a scanning speed of about 10 cm/sec and then its irradiation allows a recrystallized silicon island 5 to form into single crystals with the exception of the periphery of a directly above part 51 of the buried layer 4.