| 摘要 |
PURPOSE:To easily manufacture a mask for patterning use by a method wherein, while a substrate is brought into contact with an organo-metallic gas, it is irradiated with the light so that a metal film can be formed only in a required region. CONSTITUTION:While a substrate 11 is brought into contact with an organo- metallic gas such as triisobutyl aluminum or the like, a desired region of the substrate is irradiated with the light such as an excimer laser or the like; the organo-metallic gas in a region which is irradiated with the light is decomposed; a metal film 3 is formed only in the region; said substrate 11 is etched by using this metal film 3 as a mask. A two-layered film which is formed by depositing an upper layer (a second mask) 52 composed of said metal film on a lower layer (a first mask) 51 composed of another material can be used as the mask for patterning use.
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