发明名称 |
Passivation with a low oxygen interface |
摘要 |
A process for depositing oxygen doped semi-insulating polycrystalline silicon (SIPOS) as a passivation layer over the junction of a semiconductor silicon substrate in which the substrate is subjected to an oxygen removal step immediately prior to the creation of the SIPOS layer to thereby prevent the creation of an oxide layer at the interface between the SIPOS and the substrate.
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申请公布号 |
US4778776(A) |
申请公布日期 |
1988.10.18 |
申请号 |
US19860882857 |
申请日期 |
1986.07.07 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
TONG, DAVID W.;BENJAMIN, JOHN L.;VANDELL, WILLIAM R. |
分类号 |
H01L21/314;(IPC1-7):H01L21/306;B44C1/22 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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