发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To drive the titled device directly by a TTL level even if an input level is not equal to that of a TTL drive circuit by deciding the ratio of on- resistance of a P-MOST and an N-MOST constituting an inverter of a first stage of an input section so that a threshold voltage of an input transistor (TR) circuit it a desired value. CONSTITUTION:The ratio of the on-resistance of the P-MOST1 and the N-MOST 2 being components of an inverter INV1 is varied to set a circuit throughhole voltage VTHC of the inverter circuit properly. Moreover, the input to the inverter INV1 is an input from an input terminal and the feedback of an output of an inverter INV 2 receiving the output of the inverter INV1 and both the inputs are connected. An inverter INV3 is a circuit sending the output of the inverter INV1 to the circuit of the next stage further and an NPN TR 8 and an NPN TR 10 are an output section of the TTL logic circuit driving the CMOS TR. Thus, even when the input level is not the same as that of a TTL logic circuit, the titled device is driven directly by the TTL level.
申请公布号 JPS63242025(A) 申请公布日期 1988.10.07
申请号 JP19870075690 申请日期 1987.03.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 TANIGUCHI MASAHARU
分类号 H03K19/0185 主分类号 H03K19/0185
代理机构 代理人
主权项
地址