| 摘要 |
PURPOSE:To contrive to inhibit development of a spontaneous oxide film by a method wherein a sample is exposed to discharge of halocarbon gas having a condition on which an oxide film on the sample surface can be etched, it is etched, the discharge condition is successively changed into a condition, on which a carbon-containing layer to become a surface protective film can be deposited, and the sample is exposed to discharge. CONSTITUTION:A sample is exposed to the discharge of halocarbon gas having a condition capable of etching an oxide film on the sample surface to etch, the discharge condition is successively changed into a condition, on which a carbon-containing layer to become a surface protective film can be deposited, in the same chamber or in a chamber coupled in a vacuum and the sample is exposed to the discharge. That is, the sample is exposed to the plasma of such halocarbon gas as CF4+H2 gas, CHF3 gas and so on or halocarbon gas-containing gas on a certain condition and the oxide film on the surface is first removed by etching. Moreover, the sample is exposed to the plasma of halocarbon gas as it is on another condition in the same unit or in the chamber coupled in a vacuum and at that time, a carbon-containing polymer layer is deposited on the surface. Thereby, the formation of the oxide film on the surface is inhibited.
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