| 摘要 |
PURPOSE:To omit burning under specified conditions and to obtain a pattern by a simple process, by selectively etching a reflection preventing film and a material to be etched with a photoresist layer, on which a pattern is formed, as a mask, and forming the pattern. CONSTITUTION:A reflection preventing film 13 including acrylic resin is formed on a material to be etched 12. A photoresist layer 14 is formed on the preventing film 13. The resist layer 14 is exposed and developed, and a pattern is formed on the resist layer 14. With the resist layer 14, on which the pattern is formed, as a mask, the preventing film 13 and the material to be etched 12 are selectively etched, and a pattern is formed on the material to be etched 12. Thus burning under specified conditions is omitted, and the pattern is obtained in a simple process.
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