| 摘要 |
PURPOSE:To reduce base resistance and base-collector junction capacitance, and to increase the working speed of a transistor by using a high melting-point metallic silicide layer on an insulating layer as a base leading-out electrode. CONSTITUTION:An SiO2 film 44 in a region including an N-type epitaxial layer 34a as an active region is etched, and boron is implanted to an exposed polysilicon film 41a to form a boron-doped polysilicon film 41b. Sputtering evaporation are conducted onto the film 41b, employing Mo, etc. as a high melting-point metal as a target, and an Mo thin-film 46 is deposited. A boron- doped molybdenum silicide layer 47 is shaped through heat treatment. The film 41a is oxidized, and a field SiO2 film 48 is formed selectively. The film 48 is also shaped onto the layer 47 at that time. Accordingly, a base leading-out electrode is formed in a self-alignment manner, and base resistance and base- collector junction resistance are reduced, thus increasing working speed.
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