| 摘要 |
PURPOSE:To obtain a semiconductor laser which has small temperature dependency of a threshold oscillating current by providing the same conductive type semiconductor layer having a band gap larger than that of the first conductive type active layer at both sides of the first conductive type layer, and further forming the first and second conductive type clad layers having large band gap. CONSTITUTION:The first P type InGaAsP layer 22 having a band gap of 1.05mum of wavelength is grown on an N type InP substrate and clad layer 21, and a P type InGaAsP active layer 23 having a band gap of 2.3mum of wavelength is formed thereon. Then, a P type InGaAsP layer 24 having a band gap of 1.05mum of wavelength is grown thereon, and a P type InP clad layer 25 is formed thereon. The band gaps of the layer 25 and the layer 21 of the clad layer are selected to be larger than those of the layers 22, 24. Thereafter, an electrode 27 is covered through a P type InGaAsP gap layer 26 on the layer 25, and an electrode 28 is covered on the back surface of the layer 21. |
