| 摘要 |
PURPOSE:To stably operate a high output for a long period by forming a current injecting region in a discontinuous injecting region near the end face of resonance. CONSTITUTION:A V-shaped groove 19 is formed at the center of an n-type GaAs current blocking layer 12, and a p-type GaAlAs clad layer 13 of upper layer is contacted with a p-type GaAs substrate 11 of lower layer. That is, a current flows to an active layer 14 in a stripelike region provided with the groove 19. A plurality of grooves 22 are formed at near the end faces 20, 21 of a resonator, the layer 12 is buried, and since the layer 13 is not contacted with the substrate 11 in the region of the groove 22, it can block a current to the layer 14 Thus, since the density of injecting current to the layer 14 located near the end face of resonance is reduced as compared with the center of the resonator, heat generation near the end face is suppressed at the time of operating at a high output, and an oversaturation absorber effect does not occur.
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