发明名称 |
Protection film structure for functional devices |
摘要 |
An inorganic protection film (12) such as of silicon nitride for protecting humidity-sensitive functional devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as one made of polycarbonate plastic material, with a soft buffer interface film (13) between the substrate and the protection film, and the buffer film releases stress due to the difference of thermal expansion coefficients of the organic substrate and the protection film.
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申请公布号 |
US4770923(A) |
申请公布日期 |
1988.09.13 |
申请号 |
US19850800042 |
申请日期 |
1985.11.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
WASA, KIYOTAKA;HIRAO, TAKASHI;NISHIKAWA, ATSUO;NISHINO, SEIJI;OHTA, TAKEO |
分类号 |
H01L21/314;G11B5/72;G11B7/24;H01L23/29;H01L23/31;(IPC1-7):B05D3/06;B32B9/00 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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