发明名称 Protection film structure for functional devices
摘要 An inorganic protection film (12) such as of silicon nitride for protecting humidity-sensitive functional devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as one made of polycarbonate plastic material, with a soft buffer interface film (13) between the substrate and the protection film, and the buffer film releases stress due to the difference of thermal expansion coefficients of the organic substrate and the protection film.
申请公布号 US4770923(A) 申请公布日期 1988.09.13
申请号 US19850800042 申请日期 1985.11.20
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 WASA, KIYOTAKA;HIRAO, TAKASHI;NISHIKAWA, ATSUO;NISHINO, SEIJI;OHTA, TAKEO
分类号 H01L21/314;G11B5/72;G11B7/24;H01L23/29;H01L23/31;(IPC1-7):B05D3/06;B32B9/00 主分类号 H01L21/314
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