| 摘要 |
PURPOSE:To improve crystallinity significantly by a method wherein an electric oven as a main heat source is provided outside a reaction tube and a supplementary oven is provided inside the reaction tube, thereby the uniform film thickness of a thin film of semiconductor crystal is obtained. CONSTITUTION:A cylindrical electric oven 3, which is trisected along the axis direction, is provided outside a reaction tube 2 to be used for controlling the temperature distribution along the axis direction and an electric heater 21, which is sealed inside a quartz tube, is provided inside the reaction tube 2 to correct the temperature distribution along Y-direction. The temperature distribution along Z-direction is made uniform by the electric oven 3 and at the same time, the temperature of the surface of deposition solution, which is not facing a substrate crystal, is set to be 0.5-1.0 deg.C higher than that of the substrate crystal by the electric heater 21. |
