| 摘要 |
PURPOSE:To use a two-dimensional electron gas generated in the interface of semiconductors of different electron affinity as a conductive medium, and to enable three-dimensional structure regarding the semiconductor device utilizing the two-dimensional electron gas, the so called high electron mobility transistor (HEMT). CONSTITUTION:Two AlGaAs layers 13, 15 are formed to the upper and lower sections of a GaAs layer 14 (a channel layer). An N type imprity is doped selectively to a desired region of one AlGaAs layer, a region 13' (a region in which a channel is formed in the GaAs layer being oppositely in contact with the region) constituting an electron supply layer, and the N type impurity is doped selectively to a desired region of the other AlGaAs layer, a region 15' crossing the channel, and the two-dimensional electron gas generated in the GaAs layer being oppositely in contact with the desired region of the other AlGaAs layer is used as a control section. |
