Permeable-base transistor.

摘要

A semiconductor structure that includes a semiconductor substrate (1); an insulating layer (3) adjacent the substrate (1); a semiconductor or conductor grid (4) adjacent the insulating layer (3); another insulating layer (5) adjacent the semiconductor grid (4); and an injector (6) adjacent the second insulating layer (5). The injector includes a layer of silicon-rich insulator material (7) and a layer of semiconductor material (8) adjacent the silicon-enriched material (7).