| 摘要 |
PURPOSE:To relax an electric field by keeping a sufficient distance between a wiring part and a semiconductor substrate and to prevent a residual part and a disconnection at a stepped part of the wiring part from being caused, by a method wherein a hole is made in the substrate, this hole is buried with an insulating film and the wiring part is installed on the insulating film. CONSTITUTION:A field SiO2 film 3 is formed on a P-type substrate 1; then, the oxide film 3 is removed selectively by a photoetching technique; a hole is made at the substrate 1 by making use of a resist 21 used for the selective removal as a mask. Then, everything other than an oxide film 22 on the hole is removed so that the hole can be made flat; a polysilicon layer 2 is formed on the oxide film 22. If the depth of the hole to be made in the substrate 1 is controlled in this manner, it is possible to keep a sufficient distance between the polysilicon wiring part 2 and the semiconductor substrate 1; it is possible to relax an electric field between both these; it is possible to eliminate a residual part and a disconnection at a stepped part of the wiring part.
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