发明名称 ABSOLUTE PRESSURE TYPE SEMICONDUCTOR PRESSURE SENSOR
摘要 PURPOSE:To obtain a pressure sensor which consists of the small number of components and does not require high-level technique for machining, fixation, etc., by fixing a silicon pressure sensing chip which has a gauge resistance at a diaphragm part on a substrate made of AlN. CONSTITUTION:The pressure sensing chip is fixed on the AlN substrate whose heat expansion coefficient is approximately equal to that of silicon as the material of the pressure sensing chip, and the periphery of the substrate 6 is formed by resin molding and coupled airtightly with a lid body 7 where a pressure introducing pipe part 2 is united. Consequently, the pressure in the internal space 3 of a container is held equal to pressure to be measured which is applied from the part 2. The space 8 between the diaphragm part of the pressure sensing chip 1 and the substrate 6, on the other hand, becomes a reference pressure chamber, which is evacuated or charged with constant-pressure gas. A thick film wiring circuit 4 is formed of a printed thick film on the surface of the AlN substrate 6 to constitute an amplifying circuit, etc., which is connected to the terminal of the pressure sensing chip 1 by a thin wire 5. The thin film wiring circuit 4 is provided on the external surface of the substrate 6 as well. Consequently, the number of components is decreased and the sensor which does not require high-level technique for machining and fixation is obtained.
申请公布号 JPS63195537(A) 申请公布日期 1988.08.12
申请号 JP19870027903 申请日期 1987.02.09
申请人 FUJI ELECTRIC CO LTD 发明人 KIBUNE FUKASHI
分类号 G01L7/00;G01L9/00;G01L9/04 主分类号 G01L7/00
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