发明名称 |
PRODUCTION OF DIAMOND THIN FILM OR DIAMOND-LIKE THIN FILM |
摘要 |
PURPOSE:To deposit a diamond(-like) thin film efficiently and at high speed, by generating microwave plasma in a vacuum tank to which a reaction gas and a raw material containing specific carbon are introduced. CONSTITUTION:A substrate holder 6 placing a substrate 5 is arranged in a vacuum tank 1, the substrate 5 is heated to 300-900 deg.C and pressure in the vacuum tank is kept at 10<-3>-10<-5>Torr. Then a reaction gas (e.g. CH4) g0 is fed from an inlet 3 to the vacuum tank 1, a magnetic field is produced by an electromagnet 7 and microwave with 300-600W output is impressed from a waveguide 2 to the vacuum tank to generate microwave plasma. Then a raw material gas (e.g. C2H2) g1 containing more carbons than the carbon of the reaction gas g0 is fed from a raw material inlet part 4 and reaction is carried out to grow a diamond(-like) thin film having >=4,000kg/mm<2> Vickers hardness and >=10<9>OMEGAcm electric resistance on the substrate at >=5mum/hr growth speed.
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申请公布号 |
JPS63185893(A) |
申请公布日期 |
1988.08.01 |
申请号 |
JP19870017639 |
申请日期 |
1987.01.28 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
FUKUDA TOMIYO;HIROCHI KUMIKO;KITAHATA MAKOTO;YAMAZAKI OSAMU |
分类号 |
C23C16/26;C23C16/27;C23C16/50;C23C16/511;C30B29/04 |
主分类号 |
C23C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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