发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To obtain a necessary resistance value without spreading an area in a section requiring a resistor while reducing wiring delay in other sections except the section requiring the resistor by using polysilicon for the section needing the resistor and a polycide in the other sections except the section needing the resistor. CONSTITUTION:7 represents a polysilicon wiring arranged with the object of the constitution of a resistor. A metallic silicide layer corresponding to 7b is not laminated to the polysilicon wiring section. Accordingly, only polysilicon is employed for a section requiring the resistor and a polycide for sections except the section requiring the resistor, thus acquiring a resistance value without extending an area in the section needing the resistor, then reducing wiring delay in other sections except the section requiring the resistor.
申请公布号 JPS63184355(A) 申请公布日期 1988.07.29
申请号 JP19870016457 申请日期 1987.01.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKAO YUICHI
分类号 H01L21/28;H01L21/3205;H01L21/822;H01L23/52;H01L27/04;H01L27/08 主分类号 H01L21/28
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