| 摘要 |
<p>PURPOSE:To obtain a P-ROM of a short access time without using transistors by a method wherein the first conductive layer is formed, via a thin insulation film, at an island region formed on a substrate, and the second one continuous to the island region via a P-N junction is provided; said insulation film is broken down by impressing a high electric field according to written contents, thus short-circuiting the first conductive layer with the island region. CONSTITUTION:A plurality of N type regions 2 isolated in island form are provided on the P type Si substrate 1, and thick insulation films 31 almost completely covering the regions 2 are adhered on said regions 2, and the thin insulation films 32 therebetween. Next, the first conductive layers 4 of Mo, etc. are formed while being made to extend over the end parts of the films 31 and 32, respectively. The entire surface is covered with a thick interlayer insulation film 5, contact holes 7 are bored in the films 5 and 31, and a P type impurity is diffused thereinto, thus forming P type regions 8 in the regions 2 and then generating P-N junctions. Thereafter, the second conductive layer 6' contacting the regions 8 via the holes 7 is adhered over the entire surface, the high electric field is impressed between the regions 2 and the conductive layers 4 according to the written contents, which are then short-circuited by breaking down the thin film 31.</p> |
