| 摘要 |
PURPOSE:To prevent carrier from leaking in adjoining elements by a method wherein any carrier generated by photoexcitation is interrupted by a carrier interrupting means when the potential in a control electrode region is going to exceed a specified level. CONSTITUTION:When the potential in a p base region 103 is accumulated up to specified level, a reset MOS transistor (reset Tr) 5 is made conductive to limit the base potential to the level not exceeding the specified value. Reversely speaking, the level of gate voltage in the reset Tr 5 is specified to limit the base potential level. In other words, the higher the base potential, the lower the voltage between drain and gate of the reset Tr 5. Through these procedures, the specified potential is set up at lower level than that of the saturated potential wherein the carrier accumulated in the p base region 103 starts running so that even if an intensive light enters, the carrier may be prevented from leaking in adjoining cells. |
