发明名称 ION BEAM GUN
摘要 PURPOSE:To enable ion beam exposure of high productivity by transmitting an accelerating plasma surface source flow or an accelerating ion surface source flow through a crystal mask surface and hence forming an illustrated ion beam gun. CONSTITUTION:Hydrogen gases are made to flow between high-frequency electrode plates to which a high-frequency voltage is applied from a high-frequency power source 1, so that plasma 3 is generated. The plasma 3 is ionized by a high voltage electrode plate 5 to which a high voltage is applied from a high voltage power source 4. Accelerated ions 7 are transmitted through a single-crystal mask 6 made of Si single crystal or the like, so that an illustrated ion beam surface source can be generated.
申请公布号 JPS63175317(A) 申请公布日期 1988.07.19
申请号 JP19870007536 申请日期 1987.01.16
申请人 SEIKO EPSON CORP 发明人 IWAMATSU SEIICHI
分类号 H01J27/02;H01J37/08;H01L21/027;H01L21/30 主分类号 H01J27/02
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