发明名称 |
Group III-V semiconductor electrical contact |
摘要 |
A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.
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申请公布号 |
US4757369(A) |
申请公布日期 |
1988.07.12 |
申请号 |
US19870060700 |
申请日期 |
1987.06.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JACKSON, THOMAS N.;KIRCHNER, PETER D.;PETTIT, GEORGE D.;RUTZ, RICHARD F.;WOODALL, JERRY M. |
分类号 |
H01L21/338;H01L21/28;H01L21/285;H01L29/41;H01L29/43;H01L29/45;H01L29/80;H01L29/812;(IPC1-7):H01L29/167;H01L23/48;H01L29/161;H01L29/62 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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