| 摘要 |
PURPOSE:To find the thickness of the working affected layer of a sample to be measured by measuring the refractive index of the surface of crystal by a polarization analyzing method with specific measurement wavelength, and regarding this measured value as the refractive index of the base of the sample to be measured and calculating the complex reflection coefficient ratio of the sample to be measured. CONSTITUTION:The fas optical axis of a compensating plate C is slanted by pi/4 and a polarizer P1 and an analyzer A1 are both rotated to enter what is called a crossed nicols state so that no light is transmitted through the analyzer; and the polarizer azimuth angle (P azimuth) theta is measured and the phase difference of the sample Sa is found. Then the refractive index of the crystal surface (111) is measured by the polarization analyzing method with 4,000-7,000Angstrom measurement wavelength and said measured value is regarded as the refractive index of the base of the sample to be measured to calculate the complex reflection coefficient rate of the sample Sa to be measured from said phase difference, thereby finding the thickness of the working affected layer of the sample Sa to be measured.
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