| 摘要 |
PURPOSE:To prevent the over-etching of a first electrode layer by coating the upper surface of the first electrode layer with a protective film smaller in the etching rate than an interlayer insulating film. CONSTITUTION:A first eiectrode layer 6 coated with a protective film 4 with a desired pattern is formed. An interlayer insulating film 7 coating the first electrode layer 6 and having a flat upper surface is attached. The interlayer insulating film 7 is dry-etched, using a resist layer 8 as a mask to form a plural ity of contact holes 9. The contact holes 9 are shaped by etching the interlayer insulating film 7 only in the same depth at uniform velocity until they reach to the protective film 4 on the first electrode layer 6. The interlayer insulating film 7 is etched during a time when the protective film 4 is etched, and the contact holes 9 reach up to a semiconductor substrate 1. The protective film 4 on the first electrode layer 6 and the interlayer insulating film 7 remaining on the substrate 1 are completely etched approximately simultaneously. Accord ingly, there is no possibility in which the first electrode layer 6 is not overetched.
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