| 摘要 |
PURPOSE:To inhibit the fusion of undesirable alloy particles, and to form an Al alloy wiring having high reliability by shaping the Al alloy wiring containing a metal such as Cu and thermally treating the Al alloy wiring in a short time. CONSTITUTION:An Al alloy film 12 containing Cu 13 is formed onto a semiconductor substrate 11 to which an element is shaped. Cu is distributed into the Al film approximately equally at that time. Fine CuAl2 particles 14 precipitate in Al crystals and in crystal boundaries 15 through heat treatment in a short time within five min. A heat treatment temperature T extends over 300-550 deg.C in this case, and CuAl2 grain size is brought to 0.1mum or less when the total time required for a temperature rise t1, heating t2 and a temperature drop t3 is inhibited within five min. With an Al alloy wiring containing Cu acquired in this manner, CuAl2 particles do not cross the wiring in the wiring in submicron width because CuAl2 intermetallic compound particles are shaped in size of 0.1mum or less. Accordingly, the Al wiring resisting electromigration and having high reliability is formed.
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