| 摘要 |
PURPOSE:To easily form a thin single crystal film consisting of a high melting point material at a relatively low temp. by forming a film of the high melting point material to be annealed in the form of a fine particle film having a prescribed grain size or below on a substrate and projecting an energy beam to said film, thereby forming the thin single crystal film. CONSTITUTION:The inside of a vacuum chamber 3 is held at a high vacuum by pumps 6, 7 and the fine particle film 5 consisting of the high melting point material, for example, TiO2, having <=1,000Angstrom grain size is deposited on the substrate 4. The beam generated by an energy beam generator 1 such as laser gun provided in the upper part of the chamber 3 is projected toward the substrate 4. The intensity and direction of said beam are controlled by a beam projection system 2 provided below the generator 1 so that the beam arrives at the fine particle film 5 on the substrate 4. The film 5 is melted or joined to grow the thin single crystal film when the intensity of the beam to be projected attains a sufficient value. The film of the high melting point material to be annealed is formed as the fine particle film having <=1,000Angstrom grain size in this method and, therefore, the energy beam of the lower density is necessitated and the titled thin single crystal film is easily obtd. at a relatively low temp.
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