发明名称 FORMING METHOD FOR ELEMENT SEPARATING REGION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent birds beaks or crystal defect from occurring or floating from occurring by filling a separating groove with first and second insulating films by a spinning ON method or a CVD method. CONSTITUTION:A separating groove is formed by reactive ion etching (RIE), for example, with a photoresist film 12 as a mask on a semiconductor substrate 11 made of a single crystal silicon. A silicon oxide film 14, a silicon nitride film 15 and a polycrystalline silicon film 16 are sequentially formed by a thermal oxidizing method. A sidewall 17 made of polycrystalline silicon is formed on the sidewall of the groove by anisotropically etching, coated by spinning on method with silica film forming solution, and then baked to form a first insulating film 18. The sidewall 17 is removed from the film 18 under the conditions that sufficient selection ratio can be adopted. The groove is buried with an insulating film made of nondoped silicon oxide by means such as CVD, etc,, etched back on the whole surface to fill the groove with a second insulating film 19, and the silicon nitride film and the silicon oxide film exposed on the surface are removed.
申请公布号 JPS63142831(A) 申请公布日期 1988.06.15
申请号 JP19860290865 申请日期 1986.12.05
申请人 NEC CORP 发明人 FUKUDA YUMI
分类号 H01L21/76 主分类号 H01L21/76
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