| 摘要 |
PURPOSE:To attain high write speed by using a PNP transistor (TR) as a load and connecting one base out of two NPN TRs to the other collector via a resistor in cross connection. CONSTITUTION:In writing information, a current flowing through NPN TRs Q3, Q4 flows through a resistor R, then each potential of the semiconductor memory cell is inverted quickly by the voltage drop across the resistor. On the other hand, in case of readout, since a read current flows through the TRs Q1, Q3 or Q2, Q4 only, no current flowing through the resistor R exists and then the readout speed is not lowered. Thus, the write speed is quickened.
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