| 摘要 |
PURPOSE:To form cell structure, in which 1/2Vcc can be applied to a plate electrode, by burying the plate electrode into a trench through an insulating film. CONSTITUTION:Si3N4 is etched, and a word line 223, phosphosilicate glass 224 for a protective film, a data line 225 and a plate wiring 226 are formed. The potential of an N<+> diffusion layer 121 shaped into a substrate can be controlled freely by the plate wiring 226 in the semiconductor memory. Since the N<+> diffusion layer is connected electrically to sheath-shaped polycrystalline Si 122 in a capacitor, the potential of sheath-shaped poly-Si 122 for the capacitor can be controlled freely by applying potential to the plate wiring 226. The 1/2Vcc plate type semiconductor memory can be realized by applying 1/2Vcc to the plate wiring. |
