发明名称 SUBSTRATE BIAS GENERATOR
摘要 PURPOSE:To bring substrate potential quickly to a fixed value by providing a control means with one control means inhibiting the operation of the control means when a power supply is turned ON. CONSTITUTION:Since a limiting circuit 5 is designed so as to inhibit the operation of a control circuit 3 at all times when a power supply is turned ON, a second substrate bias generating means 2 having large capacitance is operated when the power supply is turned ON. When an input terminal 6 reaches a high level, a transistor 7 is turned ON, a gate for a transistor 10 reaches the high level, thc transistor 10 is turned ON, and an output terminal 11 reaches a low level. Since a capacitor 8 is charged at that time, the gate for the transistor 10 holds the high level even when the input terminal 6 reaches the low level after that, and the output terminal 11 continues to hold the low level.
申请公布号 JPS63136556(A) 申请公布日期 1988.06.08
申请号 JP19860282528 申请日期 1986.11.27
申请人 MATSUSHITA ELECTRONICS CORP 发明人 IKUSHIMA MASAO
分类号 H01L27/04;G11C11/407;H01L21/822;H01L21/8242;H01L27/02;H01L27/10;H01L27/108 主分类号 H01L27/04
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