| 摘要 |
PURPOSE:To reduce voids and, at the same time, to realize a high reliability against short-circuit between metal wiring parts due to pinholes by a method wherein a phospho-silicate glass film 6 is formed on a lower layer and a silicon nitride film 7 is formed on an upper layer. CONSTITUTION:A phospho-silicate glass (PSG) film 6 is formed on a lower layer and a silicon nitride film 7 is formed on an upper layer. For example the PSG film 6 and the plasma nitride film 7 are installed between the lower-layer metal wiring part 3, which is formed on a silicon substrate 1 and a field oxide film 2, and an upper- layer metal wiring part 5; both these films constitute an interlayer insulating film. Through this constitution, the PSG film not only shows an electrically insulating effect, but also relaxes a stress which is exerted on the lower-layer metal wiring part. In addition, the plasma nitride film sufficiently covers the uneven lower-layer metal wiring part which cannot be covered with the PSG film. Accordingly, it is possible to realize a highly reliable device where the occurrence of voids inside the lower-layer metal wiring part can be prevented and the high reliability is maintained against short-circuit between the upper-layer and lower-layer wiring parts due to a pinhole inside the interlayer insulating film.
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